瀏覽次數:498by:禧豐科技
Micron Samsung Hynix
Offer:K4B1G1646I-BYMAK4B2G1646F-BYMAK4B4G0846E-BCMAK4B4G1646
| Offer: | ||
| K4B1G1646I-BYMA | ||
| K4B2G1646F-BYMA | ||
| K4B4G0846E-BCMA | ||
| K4B4G1646E-BCMA | ||
| K4E8E324EB-EGCF | ||
| KLM4G1FEPD-B031 | ||
| KLM8G1GEME-B041 | ||
| KLMAG2GEND-B031 | ||
| KMFNX0012M-B214 | ||
| THGBMFG6C1LBAIL | ||
| DDR2 | 品牌 | 數量 |
| DDR2 MT47H256M8EB-25E:C | Micron | |
| DDR2 EDE2108AEBG-8E-F-D | Micron | 19200 |
| DDR2 MT47H128M16RT-25E:C | Micron | 10000 |
| DDR2 K4T1G084QG-BCF8 | Samsung | |
| DDR2 K4T1G084QF-BCF8 | Samsung | |
| DDR2 H5PS1G83KFR-S6C | Hynix | 19200 |
| DDR2 MT47H128M8SH-25E:M | Micron | 10000 |
| DDR2 MT47H128M8CF-25E:H | Micron | 10000 |
| DDR2 K4T1G084QJ-BCE7 | Samsung | 10240 |
| DDR2 K4T1G084QJ-BCF7 | Samsung | 10240 |
| DDR2 NT5TU64M16HG-ACI | Nanya | 10000 |
| DDR2 K4T1G164QF-BCF7 | Samsung | 10000 |
| DDR2 K4T1G164QJ-BCF7 | Samsung | 10240 |
| DDR2 K4T1G164QG-BCF7 | Samsung | |
| DDR2 K4T1G164QG-BCE7 | Samsung | 12800 |
| DDR2 MT47H64M8SH-25E:H | Micron | |
| DDR2 H5PS5182KFR-S5C | Hynix | 9600 |
| DDR2 MT47H32M16NF-25E:H | Micron | 10000 |
| DDR2 MT47H32M16NF-25EIT:H | Micron | 10000 |
| DDR2 K4T51163QQ-BCE7 | Samsung | |
| DDR2 K4T51083QQ-BCE7 | Samsung | 30000 |
| DDR2 K4T51083QQ-BCE6 | Samsung | |
| DDR2 H5PS1G63KFR-Y5C | Hynix | 50000 |
| DDR2 NT5TU64M8DE-3C | Nanya | 19200 |
| DDR2 MT47H64M16NF-25E:M | Micron | 20000 |
| DDR2 MT47H64M16NF-25EIT:M | Micron | 12000 |
| DDR2 MT47H64M16NF-25EAIT:M | Micron | 6000 |
| DDR3 | 品牌 | 數量 |
| DDR3 K4B8G1646Q-MYK0 | Samsung | 48000 |
| DDR3 K4B8G1646D-MYK0 | Samsung | 20000 |
| DDR3 K4B4G1646B-HCMA | Samsung | |
| DDR3 H5TQ4G63AFR-RDC | Hynix | 50000 |
| DDR3 K4B2G1646F-BYMA | Samsung | 22400 |
| DDR3 K4B2G1646F-BCMA | Samsung | |
| DDR3 H5TQ4G83AFR-PBC | Hynix | 19200 |
| DDR3 K4B4G0846D-BYK0 | Samsung | |
| DDR3 K4B4G0846E-BYK0 | Samsung | 20480 |
| DDR3 H5TC4G83AFR-PBA | Hynix | 19200 |
| DDR3 K4B4G0846D-BCK0 | Samsung | |
| DDR3 H5TQ4G83CFR-RDC | Hynix | 19200 |
| DDR3 H5TC4G83BFR-PBA | Hynix | 19200 |
| DDR3 H5TC4G83DFR-PBA | Hynix | 10000 |
| DDR3 H5TC4G83DFR-RDA | Hynix | 57600 |
| DDR3 H5TQ4G83DFR-RDC | Hynix | 19200 |
| DDR3 H5TC4G63CFR-PBA | Hynix | 38400 |
| DDR3 H5TC4G63EFR-PBA | Hynix | 50000 |
| DDR3 MT41K512M8RH-125:E | Micron | 30000 |
| DDR3 MT41K512M8DA-107:P | Micron | 10000 |
| DDR3 MT41K512M8DA-107IT:P | Micron | |
| DDR3 MT41K512M8RG-107:N | Micron | |
| DDR3 K4B4G1646D-BYK0 | Samsung | 20160 |
| DDR3 K4B4G1646Q-HYK0 | Samsung | |
| DDR3 H5TQ4G63AFR-PBC | Hynix | 9600 |
| DDR3 K4B4G1646D-BCK0 | Samsung | 22400 |
| DDR3 K4B4G1646E-BCK0 | Samsung | 11200 |
| DDR3 K4B4G1646D-BCMA | Samsung | 11200 |
| DDR3 K4B4G1646E-BCMA | Samsung | 22400 |
| DDR3 K4B4G1646E-BCNB | Samsung | |
| DDR3 K4B4G0846E-BCMA | Samsung | 5120 |
| DDR3 H5TQ2G83FFR-RDC | Hynix | |
| DDR3 K4B4G0846E-BCNB | Samsung | 20000 |
| DDR3 K4B4G0846E-BYMA | Samsung | 28800 |
| DDR3 H5TQ2G83FFR-PBC | Hynix | |
| DDR3 MT41K256M8DA-125:K | Micron | 10000 |
| DDR3 NT5CB128M16FP-DI | Nanya | 10000 |
| DDR3 NT5CC128M16IP-DI | Nanya | 20000 |
| DDR3 NT5CB256M16CP-EK | Nanya | |
| DDR3 NT5CB128M16IP-EK | Nanya | 10000 |
| DDR3 NT5CB256M16DP-EK | Nanya | 20000 |
| DDR3 NT5CC512M8DN-DI | Nanya | |
| DDR3 H5TQ2G63FFR-PBC | Hynix | 19200 |
| DDR3 H5TQ2G63FFR-RDC | Hynix | 30000 |
| DDR3 H5TQ2G63GFR-RDC | Hynix | 19200 |
| DDR3 K4B2G1646E-BCK0 | Samsung | |
| DDR3 K4B2G1646Q-BCK0 | Samsung | 10000 |
| DDR3 K4B2G1646Q-BIK0 | Samsung | |
| DDR3 K4B2G1646F-BCK0 | Samsung | 17920 |
| DDR3 K4B4G1646E-BYK0 | Samsung | 10080 |
| DDR3 K4B2G1646Q-BCMA | Samsung | |
| DDR3 K4B2G1646F-BYK0 | Samsung | 10240 |
| DDR3 K4B1G0846I-BCK0 | Samsung | 10240 |
| DDR3 H5TQ1G63EFR-PBC | Hynix | |
| DDR3 K4B1G1646G-BCK0 Samsung 11200 | Samsung | 11200 |
| DDR3 K4B1G1646I-BYK0 | Samsung | |
| DDR3 H5TC8G43AMR-PBA Hynix 9600 | Hynix | 9600 |
| DDR3 MT41K1G8SN-125:A | Micron | 2000 |
| DDR3 H5TC8G63CMR-PBA | Hynix | 9600 |
| DDR3 MT41K512M16HA-125:A | Micron | 10000 |
| DDR3 H5TQ4G63CFR-RDC | Hynix | 28800 |
| DDR3 H5TQ4G63EFR-RDC | Hynix | 44800 |
| DDR3 H5TQ4G63CFR-TEC | Hynix | 19200 |
| DDR3 MT41K256M16HA-125:E | Micron | 10000 |
| DDR3 K256M16HA-125IT:E | Micron | |
| DDR3 MT41K256M16LY-107:N | Micron | |
| DDR3 MT41K256M16TW-107:P | Micron | 10000 |
| DDR4 | 品牌 | 數量 |
| DDR4 MT40A512M16JY-083E:B | Micron | 4000 |
| DDR4 MT40A512M8RH-083E:B | Micron | 16000 |
| DDR4 K4A4G085WE-BCRC | Samsung | 15360 |
| DDR4 MT40A256M16GE-083E:B | Micron | 30000 |
| DDR4 K4A4G165WD-BCRC | Samsung | |
| DDR4 H5AN4G8NAFR-UHC | Hynix | 28800 |
| DDR4 K4A4G165WE-BCRC | Samsung | 11200 |
| DDR4 K4A4G165WE-BCPB | Samsung | 10000 |
| DDR4 H5AN4G8NAFR-TFC SK | Hynix | 19200 |
| DDR4 MT40A1G8WE-083E:B | Micron | 10000 |
| DDR4 H5AN8G8NAFR-TFC | Hynix | 20800 |
| DDR4 H5AN8G8NAFR-UHC | Hynix | 9600 |
| DDR4 K4A8G085WB-BCRC | Samsung | 12800 |
| DDR4 K4A8G165WB-BCRC | Samsung | 11200 |
| DDR4 K4A8G165WB-BCPB | Samsung | 10000 |
| DDR4 H5AN4G6NAFR-UHC | Hynix | |
| DDR4 H5AN8G6NAFR-UHC | Hynix | |
| Nand Flash / Nor Flash | 品牌 | 數量 |
| MT29F512G08CKECBH7-12:C | Micron | 2000 |
| TH58DVG4S0ETAK0 | Toshiba | 20000 |
| MT29F64G08CBAAAWP-Z:A | Micron | |
| K9GBG08U0A-SCB0 | Samsung | |
| MT29F32G08CBADAWP:D | Micron | 20000 |
| MT29F32G08CBACAWP-Z:C | Micron | 10000 |
| H27U4G8F2DTR-BC | Hynix | 9600 |
| TC58NVG0S3HTA00 | Toshiba | 15200 |
| MT29F4G08ABAEAH4:E | Micron | 10000 |
| TC58NVG1S3ETA00 | Toshiba | 20160 |
| TC58NVG1S3HTA00 | Toshiba | |
| K9K8G08U0E-SCB0 | Samsung | 9600 |
| K9K8G08U0D-SIB0 | Samsung | 5760 |
| K9K8G08U0E-SIB0 | Samsung | |
| MT29F8G08ADBDAH4-IT:D | Micron | |
| MT29F8G08ABABAWP:B | Micron | 5000 |
| MT29F8G08ABACAWP-IT:C | Micron | 10000 |
| MT29F8G08ABACAWP:C | Micron | |
| TC58NVG3S0FTA00 | Toshiba | 9600 |
| K9F4G08U0D-SCB0 | Samsung | |
| K9F4G08U0E-SCB0 | Samsung | |
| MT29F4G08ABADAWP:D | Micron | 2000 |
| MT29F4G16ABADAWP:D | Micron | 10000 |
| TH58NVG2S3HTA00 | Toshiba | |
| SDTNSGAMA-008GM | Sandisk | 9600 |
| K9F2G08U0C-SCB0 | Samsung | |
| K9F2G08U0C-BIB0 | Samsung | |
| MT29F2G08ABAEAWP:E | Micron | 20000 |
| MT29F2G08ABAEAWP-IT:E | Micron | 10000 |
| MT29F1G08ABAEAH4:E | Micron | |
| K9F1G08U0E-SCB0 | Samsung | 6720 |
| K9F1G08U0D-BIB0 | Samsung | 12480 |
| H27S1G8F2BFR-BC Hynix 10000 | Hynix | 10000 |
| S34ML01G100TFI000 | Spansion | |
| S34ML01G200TFI000 | Spansion | |
| S34ML04G200TFI000 | Spansion | 9600 |
| MT29F1G08ABADAH4-IT:D | Micron | 10000 |
| MT29F1G16ABBDAHC-IT:D | Micron | 10000 |
| MT29F1G08ABAEAWP:E | Micron | 8000 |
| MT29F1G16ABBDAH4-IT:D | Micron | |
| TC58NVG0S3ETA00 | Toshiba | 19200 |
#Micron#Hynix#Samsung
https://www.techwedo.com/web/NMD?postId=1308007清倉優惠 - 4" si wafer
Diameter:4 inch,Thickness:650+/-25,Resistivity: